On a nickel arsenide.

被引：0
|
作者：
Granger, A
Didier, G
机构：
来源：
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES | 1900年 / 130卷
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：914 / 915
页数：2
相关论文
共 50 条
  • [41] MECHANISM OF THE COMPENSATION OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE.
    Ganapol'skii, E.M.
    Omel'yanovskii, E.M.
    Pervova, L.Ya.
    Fistul', V.I.
    1600, (07):
  • [42] METHOD OF MEASURING THE INHOMOGENEITIES OF THE ELECTROPHYSICAL PROPERTIES OF SEMIINSULATING GALLIUM ARSENIDE.
    Yurova, E.S.
    Kartavykh, A.V.
    Industrial Laboratory (USSR) (English translation of Zavodskaya Laboratoriya), 1987, 53 (05): : 402 - 406
  • [43] ABSORPTION OF LIGHT ASSISTED BY EQUILIBRIUM OPTICAL PHONONS IN GALLIUM ARSENIDE.
    Al'perovich, V.L.
    Terekhov, A.S.
    1978, 12 (10): : 1143 - 1145
  • [44] SHUBNIKOV-DE HAAS OSCILLATIONS IN COMPENSATED GALLIUM ARSENIDE.
    Vul, B.M.
    Zavaritskaya, E.I.
    Kotel'nikova, N.V.
    Voronova, I.D.
    1600, (10):
  • [45] CHROMIUM AND IRON IMPURITIES IN LIQUID ENCAPSULATED CZOCHRALSKI GALLIUM ARSENIDE.
    Clegg, J.B.
    1600, (53):
  • [46] Polarographic and Photometric Determination of Iodides at Trace Levels in Gallium Arsenide.
    Novak, Josef
    Vyhlidka, Pavel
    Flasarova, Marie
    Chemicky prumysl, 1986, 36 (04): : 184 - 187
  • [47] CALCULATION OF THE HOMOGENEITY RANGE OF TIN-DOPED GALLIUM ARSENIDE.
    Morozov, A.N.
    Bublik, V.T.
    Morozova, O.Yu.
    Neorganiceskie materialy, 1987, 23 (09): : 1429 - 1433
  • [48] INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION OF RADIATION DEFECTS IN GALLIUM ARSENIDE.
    MANONTOV, A.P.
    PESHEV, V.V.
    1982, V 16 (N 5): : 586 - 587
  • [49] CAPTURE OF HOLES BY CHROMIUM IMPURITY CENTER IN SEMIINSULATING GALLIUM ARSENIDE.
    Brodovoi, V.A.
    Mirets, L.Z.
    Peka, G.P.
    Soviet physics. Semiconductors, 1980, 14 (07): : 788 - 790
  • [50] INFLUENCE OF THE DEGREE OF DOPING ON THE SHAPE OF THE EDGE LUMINESCENCE BAND OF INDIUM ARSENIDE.
    Vil'kotskii, V.A.
    Domanevskii, D.S.
    Kakanakov, R.D.
    Krasovskii, V.V.
    Soviet physics. Semiconductors, 1979, 13 (05): : 553 - 559
12345