共 50 条
- [31] LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1980, 14 (03): : 251 - 252
- [32] INFLUENCE OF IMPURITIES ON THE ENERGY OF STACKING FAULTS IN GALLIUM ARSENIDE. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (02): : 279 - 282
- [33] INTERACTION OF RADIATION DEFECTS WITH COPPER ATOMS IN GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1982, 16 (08): : 936 - 937
- [34] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (05): : 526 - 529
- [35] PROPERTIES OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 311 - 316
- [36] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (07): : 958 - 959
- [37] ROLE OF THE THERMOCHEMICAL EFFECT IN LASER BEAM EROSION OF GALLIUM ARSENIDE. Soviet physics. Technical physics, 1981, 26 (07): : 842 - 846
- [38] HIGH-FREQUENCY LIMIT OF THE GUNN EFFECT IN GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1981, 15 (12): : 1343 - 1345
- [39] ANALYSIS OF MASS TRANSPORT DURING ELECTROLIQUID EPITAXY OF GALLIUM ARSENIDE. Soviet physics. Technical physics, 1983, 28 (03): : 334 - 338