共 50 条
- [43] Electron and phonon dynamics in indium antimonide crystals Optical and Quantum Electronics, 2008, 40 : 249 - 252
- [44] HALL EFFECT IN HEAVILY DOPED N-TYPE INDIUM ANTIMONIDE CYRSTALS WITH A MIXED IMPRUITY SCATTERING MECHANISM SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 195 - &
- [45] Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate Journal of Communications Technology and Electronics, 2017, 62 : 309 - 313
- [47] MOSSBAUER EFFECT IN INDIUM ANTIMONIDE DOPED WITH IRON SOVIET PHYSICS SOLID STATE,USSR, 1971, 12 (09): : 2198 - +
- [48] ON ENERGY EXCHANGE BETWEEN HOT ELECTRONS AND LATTICE IN INDIUM ANTIMONIDE PHYSICS LETTERS, 1966, 22 (02): : 128 - &
- [49] EFFECTIVE MASS OF ELECTRONS IN GERMANIUM HIGHLY DOPED WITH ARSENIC SOVIET PHYSICS-SOLID STATE, 1963, 4 (09): : 1907 - 1908
- [50] PHOTOCONDUCTIVITY OF INDIUM-ANTIMONIDE IN THE CASE OF MAGNETIC FREEZEOUT OF ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (12): : 1391 - 1392