EFFECTIVE MASS OF ELECTRONS IN HEAVILY DOPED CRYSTALS OF INDIUM ANTIMONIDE

被引：0

作者：

NASLEDOV, DN

RADAIKIN.LN

FILIPCHE.AS

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 03期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：523 / &

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[21] ABSORPTION IN INDIUM-ANTIMONIDE AND ARSENIDE CRYSTALS DOPED WITH VARIOUS ADMIXTURES
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BOLSHAKOV, LP
NAURIZBAEV, A
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 49 (01): : 183 - 188
[22] GALVANOMAGNETIC EFFECTS IN GERMANIUM DOPED INDIUM-ANTIMONIDE DEEPLY IRRADIATED WITH ELECTRONS
BRANDT, NB
SKIPETROV, EP
DMITRIEV, VV
KOLTSOV, GI
LAIGIN, EA
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1988, 29 (06): : 95 - 97
[23] SECTOR STRUCTURE IN GERMANIUM-DOPED INDIUM ANTIMONIDE SINGLE CRYSTALS
BOVINA, LA
VINOGRAD.VG
POLUBOYA.MF
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KHARAKHO.FF
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1966, 11 (02): : 320 - &
[24] Growth and characterization of indium antimonide and gallium antimonide crystals
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BULLETIN OF MATERIALS SCIENCE, 2001, 24 (05) : 445 - 453
[25] Growth and characterization of indium antimonide and gallium antimonide crystals
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H. L. Bhat
Bulletin of Materials Science, 2001, 24 : 445 - 453
[26] EFFECTIVE MASS OF ELECTRONS IN POLAR CRYSTALS
GROSS, EP
PHYSICAL REVIEW, 1952, 88 (01): : 153 - 154
[27] THERMAL CAPTURE OF HOLES AND ELECTRONS IN INDIUM ANTIMONIDE
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 1008 - +
[28] DENSITY OF CONDUCTION ELECTRONS AT NUCLEI IN INDIUM ANTIMONIDE
GUERON, M
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 135 (1A): : A200 - &
[29] ELECTRICAL PROPERTIES OF INDIUM- AND COPPER- DOPED CADMIUM ANTIMONIDE CRYSTALS
ANDRONIK, IK
ARUSHANO.EK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (06): : 719 - +
[30] ELECTRONS IN LATERAL MICROSTRUCTURES ON INDIUM-ANTIMONIDE
MERKT, U
SIKORSKI, C
ALSMEIER, J
SPECTROSCOPY OF SEMICONDUCTOR MICROSTRUCTURES, 1989, 206 : 89 - 114

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