共 50 条
- [31] PRESSURE DEPENCENCE OF EFFECTIVE MASS OF ELECTRONS IN INDIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (05): : 856 - &
- [32] PHOTO-LUMINESCENCE OF DOPED N-TYPE INDIUM ARSENIDE AND INDIUM-ANTIMONIDE CRYSTALS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (02): : K251 - K254
- [33] Magnetotransport of indium antimonide doped with manganese JEMS 2013 - JOINT EUROPEAN MAGNETIC SYMPOSIA, 2014, 75
- [34] CONCENTRATION AND MOBILITY OF ELECTRONS IN INDIUM DOPED ZINC OXIDE CRYSTALS ZEITSCHRIFT FUR PHYSIK, 1972, 257 (04): : 299 - 309
- [35] METAL-INSULATOR-TRANSITION IN HEAVILY DOPED INDIUM-ANTIMONIDE SUBJECTED TO A MAGNETIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (08): : 811 - 820
- [36] Galvanomagnetic effects in germanium-doped indium antimonide under deep irradiation with fast electrons Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizika), 1988, 43 (06): : 113 - 116
- [37] METAL-INSULATOR TRANSITION IN MANGANESE-DOPED INDIUM-ANTIMONIDE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 19 - 21
- [38] NERNST-ETTINGSHAUSEN EFFECT IN DOPED N-TYPE INDIUM ANTIMONIDE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 175 - &
- [39] SCATTERING OF ELECTRONS BY ANODIZED SURFACE OF INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 856 - 859