PHOTOCAPACITANCE INVESTIGATION OF DEFECTS IN GAAS0.6P0.4

被引：14

作者：

FORBES, L ^{[1
]}

FOGLE, RM ^{[1
]}

机构：

[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 03期

关键词：

D O I：

10.1063/1.1655419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：152 / 155

页数：4

共 50 条

[31] Degradation of Se-doped GaAs0.6P0.4 light-emitting diodes
Sato, T
Imai, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 490 - 495
[32] PROPERTIES OF ANODIC OXIDE-FILMS ON N-TYPE GAAS, GAAS0.6P0.4 AND GAP
SIXT, G
ZIEGLER, KH
FAHRNER, WR
THIN SOLID FILMS, 1979, 56 (1-2) : 107 - 116
[33] CO2-LASER ANNEALING OF NITROGEN-IMPLANTED GAAS0.6P0.4
TAKAI, M
RYSSEL, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C362 - C362
[34] Degradation of Se-doped GaAs0.6P0.4 Light-emitting diodes
Sato, Tadashige
Imai, Megumi
Sato, T., 1600, Japan Society of Applied Physics (41): : 490 - 495
[35] INVESTIGATION OF CURRENT-VOLTAGE AND CURRENT-LUMINOSITY CHARACTERISTICS OF GAAS0.6P0.4 LIGHT-EMITTING-DIODES
NIKOLAENKO, VV
SVECHNIKOV, SV
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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (02): : 621 - 630
[36] Heteroepitaxial growth of ZnSxSe1-x on GaAs0.6P0.4/GaAs by metalorganic vapor phase epitaxy
Lee, MK
Shih, TH
Huang, HF
Wei, SJ
Shih, CM
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12): : 7213 - 7216
[37] EFFECT OF SURFACE PREPARATION AND HEAT-TREATMENT ON HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4
PARTIN, DL
MILNES, AG
VASSAMILLET, LF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1581 - 1583
[38] PHOTO-ELECTROCHEMICAL CELLS BASED ON GAAS0.6P0.4 EPILAYERS - STABILIZATION AND LUMINESCENT PROPERTIES
HOBSON, WS
ELLIS, AB
APPLIED PHYSICS LETTERS, 1982, 41 (09) : 891 - 893
[39] ISOELECTRONIC TRAPS IN GAAS0.6P0.4 BY NITROGEN IMPLANTATION AND CO2-LASER ANNEALING
TAKAI, M
RYSSEL, H
APPLIED PHYSICS LETTERS, 1979, 35 (09) : 696 - 698
[40] GAAS0.6P0.4 LEDS WITH EFFICIENT TRANSPARENT CONTACTS FOR SPATIALLY UNIFORM LIGHT-EMISSION
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ABBAS, DC
PHELPS, DJ
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 580 - 585

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