PHOTOCAPACITANCE INVESTIGATION OF DEFECTS IN GAAS0.6P0.4

被引：14

作者：

FORBES, L ^{[1
]}

FOGLE, RM ^{[1
]}

机构：

[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 03期

关键词：

D O I：

10.1063/1.1655419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：152 / 155

页数：4

共 50 条

[21] THE ORIGIN OF NONRADIATIVE CENTERS IN DEGRADED LEDS FROM GAAS0.6P0.4
POPOV, A
ATANASOVA, R
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 98 (02): : 629 - 632
[22] ELECTRON TRAP BEHAVIOR IN TE-DOPED GAAS0.6P0.4
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THOMAS, H
SOLID-STATE ELECTRONICS, 1982, 25 (04) : 325 - 333
[23] RADIATION-DAMAGE IN ION-IMPLANTED GAP AND GAAS0.6P0.4
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FRITZSCHE, CR
APPLIED PHYSICS LETTERS, 1978, 33 (05) : 435 - 437
[24] DEEP ELECTRON TRAPS AND THEIR CHANGES DURING DEGRADATION IN GAAS0.6P0.4 LEDS
HUANG, B
YUAN, Q
JOURNAL OF LUMINESCENCE, 1988, 40-1 : 810 - 811
[25] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN GAAS AND GAAS0.6P0.4
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SCHULZ, M
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[26] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN GAAS AND GAAS0.6P0.4
LEFEVRE, H
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[27] LOW DARK-CURRENT MOS PHOTODIODES USING GAAS0.6P0.4
AHRENKIEL, RK
MOSER, F
COBURN, T
LYU, SL
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 267 - 269
[28] OPTICAL AND PHOTOELECTRIC PROPERTIES OF ANODIC OXIDE-FILMS ON GAAS, GAP, AND GAAS0.6P0.4
KASHKAROV, PK
OBRAZTSOV, AN
SOROKIN, IN
SOSNOVSKIKH, YN
INORGANIC MATERIALS, 1986, 22 (10) : 1407 - 1410
[29] HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4 TREATED WITH TRANSITION-METALS
PARTIN, DL
MILNES, AG
VASSAMILLET, LF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1584 - 1588
[30] 用MOCVD法在Si衬底上生长GaAs0.6P0.4
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