共 50 条
- [41] MODELING OF SILICON MOLECULAR-BEAM EPITAXY ON SI(100)THIN SOLID FILMS, 1992, 215 (01) : 14 - 18OSTEN, HJ
- [42] SILICON AUTOCOMPENSATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3571 - 3573BALLINGALL, JMMORRIS, BJLEOPOLD, DJRODE, DL
- [43] SILICON DOPING IN INP GROWN BY MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1983, 43 (08) : 780 - 782KAWAMURA, YASAHI, H
- [44] SILICON MOLECULAR-BEAM EPITAXY WITH ANTIMONY ION DOPINGJOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2630 - 2633SUGIURA, H
- [45] EFFUSION CELLS FOR DOPING IN SILICON MOLECULAR-BEAM EPITAXYVAKUUM-TECHNIK, 1985, 34 (08): : 231 - 235CASEL, AKASPER, EKIBBEL, H
- [46] HETEROEPITAXIAL GROWTH OF GAP ON SILICON BY MOLECULAR-BEAM EPITAXYJAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 1043 - 1048GONDA, SIMATSUSHIMA, YMUKAI, SMAKITA, YIGARASHI, O
- [47] SILICON MOLECULAR-BEAM EPITAXY - 1984-1986JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 411 - 420BEAN, JC
- [48] SILICON LAYERS GROWN BY DIFFERENTIAL MOLECULAR-BEAM EPITAXYJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2227 - 2231HERZOG, HJKASPER, E
- [49] SILICON MOLECULAR-BEAM EPITAXY - HIGHLIGHTS OF RECENT WORKJOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (10) : 1055 - 1059BEAN, JC
- [50] Properties of Silicon Layers Grown by Molecular-Beam EpitaxyInorganic Materials, 2005, 41 : 1131 - 1134V. G. ShengurovS. P. SvetlovV. Yu. ChalkovG. N. GorsheninD. V. ShengurovS. A. Denisov