SILICON MOLECULAR-BEAM EPITAXY - STATUS - DEVICES - TRENDS

被引：0
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作者：
KASPER, E
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来源：
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
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D O I：
10.1051/jphyscol:1988473
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页码：347 / 355
页数：9
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