HIGH MOBILITY HGTE AND HIGH-RESISTIVITY CDTE GROWN BY MOVPE ON GAAS(001)

被引：2
|
作者：
BERGUNDE, T [1 ]
WIENECKE, M [1 ]
THOMAS, B [1 ]
机构：
[1] HUMBOLDT UNIV,SEKT PHYS,BEREICH KRISTALLOG,O-1040 BERLIN,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 121卷 / 01期
关键词：
D O I：
10.1002/pssa.2211210154
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K55 / K59
页数：5
相关论文
共 50 条
  • [41] GROWTH BY TRAVELING HEATER METHOD AND CHARACTERISTIC OF UNDOPED HIGH-RESISTIVITY CDTE
    TAGUCHI, T
    SHIRAFUJI, J
    INUISHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) : 1331 - 1342
  • [42] Electrical properties of Schottky diodes using high-resistivity CdTe crystals
    Ukrainets, VO
    Il'chuk, GA
    Ukrainets, NA
    Rud', YV
    Ivanov-Omskii, VI
    TECHNICAL PHYSICS LETTERS, 1999, 25 (08) : 642 - 644
  • [43] SPACE-CHARGE LIMITED CURRENTS IN HIGH-RESISTIVITY CDTE CRYSTALS
    ZOUL, A
    KLIER, E
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1977, 27 (07) : 789 - 796
  • [44] OSCILLATION AND PHOTORESPONSE OF HIGH-RESISTIVITY N-GAAS DIODES
    TORRENS, AB
    YOUNG, L
    CANADIAN JOURNAL OF PHYSICS, 1972, 50 (11) : 1098 - &
  • [45] Epitaxial Growth of High-Resistivity CdTe Thick Films Grown Using a Modified Close Space Sublimation Method
    Jiang, Quanzhong
    Brinkman, Andy W.
    Veeramani, Perumal
    Sellin, Paul. J.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (02)
  • [46] Electrical properties of undoped high-resistivity n-CdTe polycrystals
    Yu. V. Klevkov
    S. A. Kolosov
    A. F. Plotnikov
    Semiconductors, 2007, 41 : 651 - 654
  • [47] Electrical properties of undoped high-resistivity n-CdTe polycrystals
    Klevkov, Yu. V.
    Kolosov, S. A.
    Plotnikov, A. F.
    SEMICONDUCTORS, 2007, 41 (06) : 651 - 654
  • [48] DOMINANT CONTRIBUTION OF OXYGEN TO COMPENSATION OF HIGH-RESISTIVITY GAAS FILMS
    ALEKSANDROVA, GA
    ZAVADSKII, YI
    KORNILOV, BV
    SKVORTSOV, IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1170 - 1173
  • [49] SOME FEATURES OF ELECTRICAL-CONDUCTION IN HIGH-RESISTIVITY GAAS
    BRODOVOI, VA
    DERIKOT, NZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 74 - 76
  • [50] Electrical studies in the microenvironment of dislocations in undoped high-resistivity GaAs
    Siegel, W
    Sidelnicov, A
    Kühnel, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 403 - 406
12345