HIGH MOBILITY HGTE AND HIGH-RESISTIVITY CDTE GROWN BY MOVPE ON GAAS(001)

被引：2
|
作者：
BERGUNDE, T [1 ]
WIENECKE, M [1 ]
THOMAS, B [1 ]
机构：
[1] HUMBOLDT UNIV,SEKT PHYS,BEREICH KRISTALLOG,O-1040 BERLIN,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 121卷 / 01期
关键词：
D O I：
10.1002/pssa.2211210154
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K55 / K59
页数：5
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