HIGH MOBILITY HGTE AND HIGH-RESISTIVITY CDTE GROWN BY MOVPE ON GAAS(001)

被引：2
|
作者：
BERGUNDE, T [1 ]
WIENECKE, M [1 ]
THOMAS, B [1 ]
机构：
[1] HUMBOLDT UNIV,SEKT PHYS,BEREICH KRISTALLOG,O-1040 BERLIN,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 121卷 / 01期
关键词：
D O I：
10.1002/pssa.2211210154
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K55 / K59
页数：5
相关论文
共 50 条
  • [31] Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity
    Vlasenko, LS
    Gorelenok, AT
    Emtsev, VV
    Kamanin, AV
    Kokhanovskii, SI
    Poloskin, DS
    Shmidt, NM
    TECHNICAL PHYSICS LETTERS, 2001, 27 (01) : 9 - 10
  • [32] Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity
    L. S. Vlasenko
    A. T. Gorelenok
    V. V. Emtsev
    A. V. Kamanin
    S. I. Kokhanovskii
    D. S. Poloskin
    N. M. Shmidt
    Technical Physics Letters, 2001, 27 : 9 - 10
  • [33] High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy
    E. I. Vaughan
    S. Addamane
    D. M. Shima
    G. Balakrishnan
    A. A. Hecht
    Journal of Electronic Materials, 2016, 45 : 2025 - 2030
  • [34] High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy
    Vaughan, E. I.
    Addamane, S.
    Shima, D. M.
    Balakrishnan, G.
    Hecht, A. A.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (04) : 2025 - 2030
  • [35] VERY HIGH MOBILITY HGTE FILMS GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    FELDMAN, RD
    ORON, M
    AUSTIN, RF
    OPILA, RL
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2872 - 2874
  • [36] CURRENT OSCILLATIONS AND HIGH-FIELD DOMAINS IN PHOTOEXCITED HIGH-RESISTIVITY GAAS
    TOKUMARU, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) : 76 - +
  • [37] Transport investigations on high purity MOVPE grown GaAs
    Steude, G
    Hofmann, DM
    Meyer, BK
    Hartdegen, H
    Hollfelder, M
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (02): : 1039 - 1047
  • [38] INVESTIGATION OF DEFECTS IN HIGH-RESISTIVITY UNDOPED CDTE USING THE EBIC METHOD
    WADA, M
    SUZUKI, J
    HOSOMATSU, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09): : L780 - L782
  • [39] Electrical properties of Schottky diodes using high-resistivity CdTe crystals
    V. O. Ukrainets
    G. A. Il’chuk
    N. A. Ukrainets
    Yu. V. Rud’
    V. I. Ivanov-Omskii
    Technical Physics Letters, 1999, 25 : 642 - 644
  • [40] Characterization of high-resistivity CdTe crystals for gamma-ray detectors
    Shin, HY
    Sun, CY
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (03): : 345 - 351
12345