INFLUENCE OF AN ELECTRIC-FIELD ON THE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE SYSTEM GAAS-ASCL3-H2

被引：0

作者：

LAVRENTYEVA, LG

IKONNIKOVA, GM

IVLEVA, OM

KRASILNIKOVA, LM

机构：

来源：

KRISTALLOGRAFIYA | 1979年 / 24卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：350 / &

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[31] DEPENDENCE OF THE GROWTH-RATE OF INAS EPITAXIAL LAYERS ON ASCL3 PRESSURE IN THE INAS-ASCL3-H2 SYSTEM
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[33] USE OF GALLIUM TRICHLORIDE AND TRIS(TRIMETHYLSILYL)ARSINE TO PREPARE GALLIUM-ARSENIDE VIA THE SINGLE SOURCE PRECURSOR HAVING THE EMPIRICAL-FORMULA ASCL3GA2
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[34] THE INFLUENCE OF SOURCE STABILITY ON THE PURITY AND MORPHOLOGY OF GAAS GROWN IN THE GA/ASCL3/H2 SYSTEM
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[35] Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B
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[36] INSITU OBSERVATION OF CRUST FORMATION OF GAAS IN THE GA-ASCL3-H2 SYSTEM
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[37] NOTE ON COMPOSITION OF GAAS1-XPX GROWN IN GAAS-ASCL3-PCL3-H2 SYSTEM
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[38] DEPOSITION-TEMPERATURE DEPENDENCE OF THE GROWTH-RATE OF INAS LAYERS IN A SYSTEM INAS-ASCL3-H2
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[39] THERMODYNAMIC FACTOR INFLUENCING THE GROWTH-RATE AND PURITY OF EPITAXIAL LAYERS IN THE GA-ASCL3-H2 SYSTEM
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[40] GAS PHASE COMPOSITION IN GA-ASCL3-H2 SYSTEM FOR EPITAXIAL DEPOSITION OF GAAS
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