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- [2] DEPENDENCE OF THE GROWTH-RATE OF INAS EPITAXIAL LAYERS ON ASCL3 PRESSURE IN THE INAS-ASCL3-H2 SYSTEM IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (11): : 49 - 52
- [6] State of an Iron Impurity in the Gaseous and Solid Phases During Epitaxial Growth of Gallium Arsenide in the Ga-AsCl3-H2 System.. Neorganiceskie materialy, 1986, 22 (03): : 363 - 366
- [9] DEPOSITION-TEMPERATURE DEPENDENCE OF THE GROWTH-RATE OF INAS LAYERS IN A SYSTEM INAS-ASCL3-H2 IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1984, 27 (05): : 32 - 36