INFLUENCE OF AN ELECTRIC-FIELD ON THE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE SYSTEM GAAS-ASCL3-H2

被引：0

作者：

LAVRENTYEVA, LG

IKONNIKOVA, GM

IVLEVA, OM

KRASILNIKOVA, LM

机构：

来源：

KRISTALLOGRAFIYA | 1979年 / 24卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：350 / &

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[21] INFLUENCE OF AN ELECTRIC-FIELD ON BEHAVIOR OF ZN AND TE IMPURITIES IN N-TYPE GALLIUM-ARSENIDE SINGLE-CRYSTALS
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