LOW-PRESSURE MEASUREMENT LIMITS FOR SILICON PIEZORESISTIVE CIRCULAR DIAPHRAGM SENSORS

被引：15

作者：

MATSUOKA, Y

YAMAMOTO, Y

TANABE, M

SHIMADA, S

YAMADA, K

YASUKAWA, A

MATSUZAKA, H

机构：

[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN

[2] HITACHI LTD,MECH ENGN RES LAB,TSUCHIURA,IBARAKI 300,JAPAN

[3] HITACHI INSTRUMENTS ENGN CO LTD,HITACHINAKA,IBARAKI 312,JAPAN

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1995年 / 5卷 / 01期

关键词：

D O I：

10.1088/0960-1317/5/1/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lower limit to a practical measurable span is investigated for pressure sensors that have a silicon diaphragm with circular shape and employ piezoresistive gages. Output voltages and non-linearities of the sensors are analysed, taking into account the effects of the diaphragm's large deflection and the piezoresistive effect non-linearities. Based on this analysis and industrial requirements (the minimum span output voltage must be larger than 4.3 mV V-1 and non-linearities must be within +/-0.2% at the same time), it is found that the minimum span is 15 kPa.

引用

页码：32 / 35

页数：4

共 50 条

[41] Mechanical Structural Design of a Piezoresistive Pressure Sensor for Low-Pressure Measurement: A Computational Analysis by Increases in the Sensor Sensitivity
Anh Vang Tran
Zhang, Xianmin
Zhu, Benliang
SENSORS, 2018, 18 (07)
[42] Simulation of nonideal behaviour in integrated piezoresistive silicon pressure sensors
Finkbeiner, S
Franz, J
Hein, S
Junger, A
Muchow, J
Opitz, B
Romes, W
Schatz, O
Trah, HP
DESIGN, TEST, AND MICROFABRICATION OF MEMS AND MOEMS, PTS 1 AND 2, 1999, 3680 : 188 - 199
[43] Silicon on insulator high-temperature piezoresistive pressure sensors
Zhang, W
Yao, SY
Zhang, SC
Zhang, WX
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 1, 2004, : 776 - 779
[44] Low pressure acoustic sensors for airborne sound with piezoresistive monocrystalline silicon and electrochemically etched diaphragms
Schellin, R., 1600, Elsevier Science S.A., Lausanne (46):
[45] Simulation of nonideal behaviour in integrated piezoresistive silicon pressure sensors
Romes, W
Muchow, M
Finkbeiner, S
Franz, J
Schatz, O
Trah, HP
1999 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, 1999, : 624 - 627
[46] A piezoresistive low-pressure sensor fabricated using silicon-on-insulator (SOI) for harsh environment applications
von Berg, J
Gnielka, M
Cavalloni, C
Boltshauser, T
Diepold, T
Mukhopadhyay, B
Obermeier, E
TRANSDUCERS '01: EUROSENSORS XV, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2001, : 482 - 485
[47] Low pressure piezoresistive sensors for medical electronics applications
Pramanik, C.
Saha, H.
MATERIALS AND MANUFACTURING PROCESSES, 2006, 21 (03) : 233 - 238
[48] Flexible capacitive and piezoresistive pressure sensors based on screen-printed parylene C/polyurethane composites in low-pressure range
Kurnaz, Sedat
Ozturk, Ozguer
Mehmet, Ali Hazar
Guduloglu, Utku
Yilmaz, Nurdane
Cicek, Osman
FLEXIBLE AND PRINTED ELECTRONICS, 2023, 8 (03):
[49] Stress and frequency analysis of silicon diaphragm of MEMS based piezoresistive pressure sensor
Samridhi
Kumar, Manish
Dhariwal, Sachin
Singh, Kulwant
Alvi, P. A.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2019, 33 (07):
[50] Numerical Simulation of a Striated Piezoresistive MEMS Pressure Sensor on Circular Silicon Diaphragm: A Finite Element Method-Based Study
Sabhapandit, Eshan
Jindal, Sumit Kumar
Kanekal, Dadasikandar
Patil, Hemprasad Yashwant
NANO, 2023, 18 (04)

← 1 2 3 4 5 →