LOW-PRESSURE MEASUREMENT LIMITS FOR SILICON PIEZORESISTIVE CIRCULAR DIAPHRAGM SENSORS

被引：15
|
作者：
MATSUOKA, Y
YAMAMOTO, Y
TANABE, M
SHIMADA, S
YAMADA, K
YASUKAWA, A
MATSUZAKA, H
机构：
[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
[2] HITACHI LTD,MECH ENGN RES LAB,TSUCHIURA,IBARAKI 300,JAPAN
[3] HITACHI INSTRUMENTS ENGN CO LTD,HITACHINAKA,IBARAKI 312,JAPAN
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1995年 / 5卷 / 01期
关键词：
D O I：
10.1088/0960-1317/5/1/006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The lower limit to a practical measurable span is investigated for pressure sensors that have a silicon diaphragm with circular shape and employ piezoresistive gages. Output voltages and non-linearities of the sensors are analysed, taking into account the effects of the diaphragm's large deflection and the piezoresistive effect non-linearities. Based on this analysis and industrial requirements (the minimum span output voltage must be larger than 4.3 mV V-1 and non-linearities must be within +/-0.2% at the same time), it is found that the minimum span is 15 kPa.
引用
收藏
页码：32 / 35
页数：4
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