LOW-PRESSURE MEASUREMENT LIMITS FOR SILICON PIEZORESISTIVE CIRCULAR DIAPHRAGM SENSORS

被引：15
|
作者：
MATSUOKA, Y
YAMAMOTO, Y
TANABE, M
SHIMADA, S
YAMADA, K
YASUKAWA, A
MATSUZAKA, H
机构：
[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
[2] HITACHI LTD,MECH ENGN RES LAB,TSUCHIURA,IBARAKI 300,JAPAN
[3] HITACHI INSTRUMENTS ENGN CO LTD,HITACHINAKA,IBARAKI 312,JAPAN
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1995年 / 5卷 / 01期
关键词：
D O I：
10.1088/0960-1317/5/1/006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The lower limit to a practical measurable span is investigated for pressure sensors that have a silicon diaphragm with circular shape and employ piezoresistive gages. Output voltages and non-linearities of the sensors are analysed, taking into account the effects of the diaphragm's large deflection and the piezoresistive effect non-linearities. Based on this analysis and industrial requirements (the minimum span output voltage must be larger than 4.3 mV V-1 and non-linearities must be within +/-0.2% at the same time), it is found that the minimum span is 15 kPa.
引用
收藏
页码：32 / 35
页数：4
相关论文
共 50 条
  • [31] Piezoresistive pressure sensors in the measurement of intervertebral disc hydrostatic pressure
    Moore, Michael Kevin
    Fulop, Steven
    Tabib-Azar, Massood
    Hart, David J.
    SPINE JOURNAL, 2009, 9 (12): : 1030 - 1034
  • [32] Optimum design considerations for silicon piezoresistive pressure sensors
    Kanda, Y
    Yasukawa, A
    SENSORS AND ACTUATORS A-PHYSICAL, 1997, 62 (1-3) : 539 - 542
  • [33] High Performance Piezoresistive Low Pressure Sensors
    Li, L.
    Belov, N.
    Klitzke, M.
    Park, J-S.
    2016 IEEE SENSORS, 2016,
  • [34] CAPABILITIES AND LIMITS OF SILICON PRESSURE SENSORS
    BLASQUEZ, G
    PONS, P
    BOUKABACHE, A
    SENSORS AND ACTUATORS, 1989, 17 (3-4): : 387 - 403
  • [35] 4-TERMINAL-GAUGE QUASI-CIRCULAR AND SQUARE DIAPHRAGM SILICON PRESSURE SENSORS
    KANDA, Y
    YAMAMURA, K
    SENSORS AND ACTUATORS, 1989, 18 (3-4): : 247 - 257
  • [36] LOW-PRESSURE SILICON EPITAXY
    OGIRIMA, M
    SAIDA, H
    SUZUKI, M
    MAKI, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 903 - 908
  • [37] LOW-PRESSURE SILICON EPITAXY
    DEINES, JL
    SPIRO, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C91 - C91
  • [38] LOW-PRESSURE SILICON EPITAXY
    KRULLMANN, E
    ENGL, WL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 491 - 497
  • [39] Electromechanical analysis of a piezoresistive pressure microsensor for low-pressure biomedical applications
    Herrera-May, A. L.
    Soto-Cruz, B. S.
    Lopez-Huerta, F.
    Cortes, L. A. Aguilera
    REVISTA MEXICANA DE FISICA, 2009, 55 (01) : 14 - 24
  • [40] A method of performance enhancement for piezoresistive pressure sensors through diaphragm size design
    Tang, Xiaotian
    Li, Ting
    Shang, Haiping
    Wan, Xingxing
    Wang, Weibing
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2022, 32 (10)
12345