EFFECTS OF ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEAL ON GE FILMS GROWN EPITAXIALLY ON (100) GAAS

被引：0
|
作者：
TSENG, W [1 ]
DIETRICH, H [1 ]
DAVEY, J [1 ]
CHRISTOU, A [1 ]
ANDERSON, W [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：715 / 715
页数：1
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