ELECTRON-BEAM EXCITATION AND PROFILING OF STRAINED CDS EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ON GAAS(111)A, GAAS(100), ZNSE(100) AND ZNS(100) SUBSTRATES

被引：7

作者：

TRAGERCOWAN, C ^{[1
]}

PARBROOK, PJ ^{[1
]}

YANG, F ^{[1
]}

CHEN, X ^{[1
]}

HENDERSON, B ^{[1
]}

ODONNELL, KP ^{[1
]}

COCKAYNE, B ^{[1
]}

WRIGHT, PJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90808-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.

引用

页码：532 / 535

页数：4

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