EFFECTS OF ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEAL ON GE FILMS GROWN EPITAXIALLY ON (100) GAAS

被引：0

作者：

TSENG, W ^{[1
]}

DIETRICH, H ^{[1
]}

DAVEY, J ^{[1
]}

CHRISTOU, A ^{[1
]}

ANDERSON, W ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：715 / 715

页数：1

共 48 条

[41] PHOTOLUMINESCENCE OF MG-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING MG3AS2 AS A MG SOURCE - A COMPARISON WITH MG+ ION-IMPLANTATION
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APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1184 - 1186
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[43] Effects of ion assistance and substrate temperature on optical characteristics and microstructure of MgF2 films formed by electron-beam evaporation
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[45] High-energy ion beam implantation of hydroxyapatite thin films grown on TiN and ZrO2 inter-layers by pulsed laser deposition
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[46] EFFECTS OF SUBSTRATE-TEMPERATURE AND ANGULAR POSITION ON THE PROPERTIES OF ION-BEAM SPUTTER-DEPOSITED FE FILMS ON (100) GAAS SUBSTRATES
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[47] Comparison of the Mid-Infrared Magneto-Optical Response of Ga1−xMnxAs Films Grown by Molecular Beam Epitaxy and Ion Implantation and Pulsed Laser Melting
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[48] PHOTOLUMINESCENCE AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DYNAMICS STUDY OF THE INTERFACES IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.33GA0.67AS(100) SINGLE QUANTUM-WELLS
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