ARSENIC DOPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITION HG1-XCDXTE USING TERTIARYBUTYLARSINE AND DIETHYLARSINE

被引：17
|
作者：
EDWALL, DD
CHEN, JS
BUBULAC, LO
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 03期
关键词：
D O I：
10.1116/1.585401
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
P-type arsenic doped epitaxial layers of HgCdTe have been grown by metalorganic chemical vapor deposition using two alkyl sources, tertiarybutylarsine and diethylarsine. Data are presented on Hall characteristics and arsenic concentration profiles. High activation efficiencies and hole mobilities have been obtained over the range mid-10(15) to low-10(17) cm-3.
引用
收藏
页码：1691 / 1694
页数：4
相关论文
共 50 条
  • [21] MAGNESIUM DOPING OF (AL,GA)AS IN METALORGANIC CHEMICAL VAPOR-DEPOSITION
    TAMAMURA, K
    OHHATA, T
    KAWAI, H
    KOJIMA, C
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3549 - 3554
  • [22] Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine
    Sekiguchi, Shigeaki
    Miyamoto, Tomoyuki
    Koyama, Fumio
    Iga, Kenichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (5 A): : 2638 - 2639
  • [23] Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine
    Sekiguchi, S
    Miyamoto, T
    Koyama, F
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2638 - 2639
  • [24] LARGE-AREA HGTE-CDTE SUPERLATTICES AND HG1-XCDXTE MULTILAYERS ON GAAS AND SAPPHIRE SUBSTRATES GROWN BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    PAIN, GN
    BHARATULA, N
    ELMS, TJ
    GWYNN, P
    KIBEL, M
    KWIETNIAK, MS
    LEECH, P
    PETKOVIC, N
    SANDFORD, C
    THOMPSON, J
    WARMINSKI, T
    GAO, D
    GLANVILL, SR
    ROSSOUW, CJ
    STEVENSON, AW
    WILKINS, SW
    WIELUNSKI, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1067 - 1077
  • [25] GAAS P-I-N PHOTODIODES MADE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND ARSINE
    SERREZE, HB
    BAUMANN, JA
    BUNZ, L
    SCHACHTER, R
    ESMAN, RD
    APPLIED PHYSICS LETTERS, 1989, 55 (24) : 2532 - 2534
  • [26] CARBON ACCEPTOR INCORPORATION IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - ARSINE VERSUS TERTIARYBUTYLARSINE
    WATKINS, SP
    HAACKE, G
    APPLIED PHYSICS LETTERS, 1991, 59 (18) : 2263 - 2265
  • [27] SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KUECH, TF
    VEUHOFF, E
    MEYERSON, BS
    JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 48 - 53
  • [28] METALORGANIC CHEMICAL VAPOR-DEPOSITION AND PHOTOLUMINESCENCE OF NM GAAS DOPING SUPERLATTICES
    ROENTGEN, P
    GOETZ, KH
    BENEKING, H
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1696 - 1697
  • [29] NEW MAGNESIUM DOPING SOURCE FOR METALORGANIC CHEMICAL VAPOR-DEPOSITION - OCTAMETHYLDIALUMINUMMONOMAGNESIUM
    HATANO, A
    IZUMIYA, T
    OHBA, Y
    APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1488 - 1490
  • [30] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INAIP USING TERTIARYBUTYLPHOSPHINE
    HORI, H
    KAWAKYU, Y
    ISHIKAWA, H
    MASHITA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (8A): : L1343 - L1344
12345