ARSENIC DOPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITION HG1-XCDXTE USING TERTIARYBUTYLARSINE AND DIETHYLARSINE

被引：17
|
作者：
EDWALL, DD
CHEN, JS
BUBULAC, LO
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 03期
关键词：
D O I：
10.1116/1.585401
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
P-type arsenic doped epitaxial layers of HgCdTe have been grown by metalorganic chemical vapor deposition using two alkyl sources, tertiarybutylarsine and diethylarsine. Data are presented on Hall characteristics and arsenic concentration profiles. High activation efficiencies and hole mobilities have been obtained over the range mid-10(15) to low-10(17) cm-3.
引用
收藏
页码：1691 / 1694
页数：4
相关论文
共 50 条
  • [41] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP USING PHOSPHINE MODULATION
    LEE, MK
    HU, CC
    LIN, MH
    APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1245 - 1247
  • [42] Hg1-xCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique
    Rubio, Sandra
    Sochinskii, Nikolai V.
    Repiso, Eva
    Tsybrii, Zinoviia
    Sizov, Fiodor
    Luis Plaza, Jose
    Dieguez, Ernesto
    JOURNAL OF CRYSTAL GROWTH, 2017, 457 : 211 - 214
  • [43] REFLECTING ON METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
    MANASEVIT, HM
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 94 - 99
  • [44] HEAVILY SI-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND SILANE
    CHICHIBU, S
    IWAI, A
    MATSUMOTO, S
    HIGUCHI, H
    APPLIED PHYSICS LETTERS, 1992, 60 (04) : 489 - 491
  • [45] GROWTH OF ZNS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    FUJITA, S
    TOMOMURA, Y
    SASAKI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09): : L583 - L585
  • [46] METALORGANIC VAPOR-PHASE EPITAXY IN-SITU GROWTH OF P-ON-N AND N-ON-P HG1-XCDXTE JUNCTION PHOTODIODES USING TERTIARYBUTYLARSINE AS THE ACCEPTOR SOURCE
    RAO, V
    EHSANI, H
    BHAT, IB
    KESTIGIAN, M
    STARR, R
    WEILER, MH
    REINE, MB
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (05) : 437 - 443
  • [47] HEAVY CARBON DOPING OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS USING CARBON-TETRACHLORIDE
    CUNNINGHAM, BT
    HAASE, MA
    MCCOLLUM, MJ
    BAKER, JE
    STILLMAN, GE
    APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1905 - 1907
  • [48] HG1-XCDXTE DOPING BY ION-BEAM TREATMENT
    IVANOVOMSKII, VI
    MIRONOV, KE
    MYNBAEV, KD
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (05) : 634 - 637
  • [49] ZN AND SI DOPING IN (110) GAAS EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKAMOTO, K
    FURUTA, M
    YAMAGUCHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2121 - L2124
  • [50] METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE P/N JUNCTIONS USING ARSENIC AND IODINE DOPING
    MITRA, P
    SCHIMERT, TR
    CASE, FC
    BARNES, SL
    REINE, MB
    STARR, R
    WEILER, MH
    KESTIGIAN, M
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (09) : 1077 - 1085
12345