RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON

被引：21

|

作者：

DAVIES, DE

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1969年 / 47卷 / 16期

关键词：

D O I：

10.1139/p69-221

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：1750 / &

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