RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON

被引：21
|
作者：
DAVIES, DE
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1969年 / 47卷 / 16期
关键词：
D O I：
10.1139/p69-221
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1750 / &
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