RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON

被引：21
|
作者：
DAVIES, DE
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1969年 / 47卷 / 16期
关键词：
D O I：
10.1139/p69-221
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1750 / &
相关论文
共 50 条
  • [21] DIFFUSION OF PHOSPHORUS IN ARSENIC AND BORON-DOPED SILICON
    WITTEL, F
    DUNHAM, S
    APPLIED PHYSICS LETTERS, 1995, 66 (11) : 1415 - 1417
  • [22] PRECIPITATION OF PHOSPHORUS ARSENIC AND BORON IN THIN SILICON FOILS
    JOSHI, ML
    DASH, S
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (03) : 271 - &
  • [23] ANTIMONY, ARSENIC, PHOSPHORUS, AND BORON AUTODOPING IN SILICON EPITAXY
    GRAEF, MWM
    LEUNISSEN, BJH
    DEMOOR, HHC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1942 - 1954
  • [24] A STUDY OF THE ION-IMPLANTED ARSENIC AND BORON TAILS IN SILICON
    BECK, SE
    FAN, DT
    JACCODINE, RJ
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S26 - S26
  • [25] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON
    NARAYAN, J
    HOLLAND, OW
    EBY, RE
    WORTMAN, JJ
    OZGUZ, V
    ROZGONYI, GA
    APPLIED PHYSICS LETTERS, 1983, 43 (10) : 957 - 959
  • [26] INTERACTIONS BETWEEN ARSENIC AND BORON IMPLANTED IN SILICON DURING ANNEALING
    YOKOTA, K
    OCHI, M
    HIRAO, T
    HORINO, Y
    SATHO, M
    ANDO, Y
    MATSUDA, K
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 2975 - 2980
  • [27] ANNEALING CHARACTERISTICS OF BORON-IMPLANTED AND PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON
    SETO, JYW
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5167 - 5170
  • [28] Comparison between implanted boron and phosphorus in silicon wafers.
    Burgess, J. E.
    Johnson, B. C.
    Villis, B. J.
    McCallum, J. C.
    Charnvanichborikarn, S.
    Wong-Leung, J.
    Williams, J. S.
    PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010), 2010, : 225 - 226
  • [29] COMPARISON OF PHOSPHORUS, ARSENIC AND BORON IMPLANTS INTO BULK SILICON AND SOS
    AMBERIADIS, K
    KUMP, MR
    MAGEE, CW
    SOLID-STATE ELECTRONICS, 1990, 33 (06) : 651 - 654
  • [30] ANTIMONY, ARSENIC, PHOSPHORUS, AND BORON AUTODOPING IN SILICON EPITAXY.
    Graef, M.W.M.
    Philips Research Lab, Eindhoven
    Leunissen, B.J.H.
    de Moor, H.H.C.
    1942, (132):
12345