THERMAL REDISTRIBUTION OF IMPLANTED BORON AND ARSENIC IN SILICON

被引：0
|
作者：
MICHEL, AE [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C124 / C124
页数：1
相关论文
共 50 条
  • [1] REDISTRIBUTION OF IMPLANTED ARSENIC IN SILICON
    SHAH, PL
    SCHWETTMANN, FN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C86 - C86
  • [2] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON
    NARAYAN, J
    HOLLAND, OW
    EBY, RE
    WORTMAN, JJ
    OZGUZ, V
    ROZGONYI, GA
    APPLIED PHYSICS LETTERS, 1983, 43 (10) : 957 - 959
  • [3] RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED MONOCRYSTALLINE SILICON - DOPANT REDISTRIBUTION AND OUTDIFFUSION
    CHAUSSEMY, G
    GONTRAND, C
    KUMAR, SN
    CANUT, B
    BARBIER, D
    LAUGIER, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 124 (01): : 103 - 114
  • [4] FLAME ANNEALING OF ARSENIC AND BORON IMPLANTED SILICON
    NARAYAN, J
    YOUNG, RT
    APPLIED PHYSICS LETTERS, 1983, 42 (05) : 466 - 468
  • [5] RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON
    DAVIES, DE
    CANADIAN JOURNAL OF PHYSICS, 1969, 47 (16) : 1750 - &
  • [6] CODIFFUSION OF ARSENIC AND BORON-IMPLANTED IN SILICON
    SOLMI, S
    VALMORRI, S
    CANTERI, R
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) : 2400 - 2406
  • [7] DOPANT PROFILE CONTROL BY RAPID THERMAL ANNEALING IN BORON AND ARSENIC IMPLANTED SILICON
    NARAYAN, J
    HOLLAND, DW
    EBY, R
    WORTMAN, JJ
    OZGUZ, V
    ROZGONYI, GA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1585 - 1585
  • [8] ACTIVATION AND DIFFUSION DURING RAPID THERMAL ANNEALING OF ARSENIC AND BORON IMPLANTED SILICON
    GROB, JJ
    UNAMUNO, S
    GROB, A
    AJAKA, M
    SLAOUI, A
    STUCK, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 501 - 506
  • [9] Redistribution of phosphorus implanted into silicon doped heavily with boron
    E. G. Tishkovskii
    V. I. Obodnikov
    A. A. Taskin
    K. V. Feklistov
    V. G. Seryapin
    Semiconductors, 2000, 34 : 629 - 633
  • [10] Redistribution of phosphorus implanted into silicon doped heavily with boron
    Tishkovskii, EG
    Obodnikov, VI
    Taskin, AA
    Feklistov, KV
    Seryapin, VG
    SEMICONDUCTORS, 2000, 34 (06) : 629 - 633
12345