COMPARISON OF HIGH-TEMPERATURE AND LASER-QUENCHED SI(111) USING LOW-ENERGY ELECTRON-DIFFRACTION

被引：27

|

作者：

PHANEUF, RJ

WILLIAMS, ED

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.35.4155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：4155 / 4158

页数：4

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