COMPARISON OF HIGH-TEMPERATURE AND LASER-QUENCHED SI(111) USING LOW-ENERGY ELECTRON-DIFFRACTION

被引：27
|
作者：
PHANEUF, RJ
WILLIAMS, ED
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.35.4155
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4155 / 4158
页数：4
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