ELECTRICAL-PROPERTIES OF LASER-ANNEALED GLOW-DISCHARGE AMORPHOUS-SILICON LAYERS

被引：4

作者：

KOH, YK ^{[1
]}

OKAMOTO, H ^{[1
]}

MURAKAMI, K ^{[1
]}

GAMO, K ^{[1
]}

HAMAKAWA, Y ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 05期

关键词：

D O I：

10.1143/JJAP.19.849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：849 / 853

页数：5

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