ELECTRICAL-PROPERTIES OF LASER-ANNEALED GLOW-DISCHARGE AMORPHOUS-SILICON LAYERS

被引：4
|
作者：
KOH, YK [1 ]
OKAMOTO, H [1 ]
MURAKAMI, K [1 ]
GAMO, K [1 ]
HAMAKAWA, Y [1 ]
NAMBA, S [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 05期
关键词：
D O I：
10.1143/JJAP.19.849
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：849 / 853
页数：5
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