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- [11] AVALANCHE BREAKDOWN LUMINESCENCE OF DIFFUSED P-N-JUNCTIONS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1211 - 1212
- [12] INVESTIGATION OF ELECTRICAL BREAKDOWN IN GAAS DIFFUSED P-N-JUNCTIONS RADIOTEKHNIKA I ELEKTRONIKA, 1978, 23 (06): : 1241 - 1250
- [13] ELECTRICAL-PROPERTIES OF SNTE EPITAXIAL-FILMS ON MICA SUBSTRATE PHYSICA B & C, 1983, 115 (02): : 156 - 160
- [15] INVESTIGATION OF THE ELECTRICAL-PROPERTIES OF HIGH-VOLTAGE SILICON P-N-JUNCTIONS BY OPTICAL-SCANNING SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 412 - 415
- [19] INFLUENCE OF MAGNETIC-FIELDS ON MICROPLASMA INSTABILITY OF CURRENT IN DIFFUSED SILICON P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1167 - 1167