INFLUENCE OF RAPID THERMAL ANNEALING TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF BE-IMPLANTED GAAS P-N-JUNCTIONS

被引：1
|
作者：
DELYON, TJ
CASEY, HC
MASSOUD, HZ
TIMMONS, ML
HUTCHBY, JA
DIETRICH, HB
机构：
[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709
[2] USN,RES LAB,WASHINGTON,DC 20375
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期
关键词：
D O I：
10.1063/1.99544
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2244 / 2246
页数：3
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