STRUCTURAL DEFECTS IN SILICON EPITAXIAL-FILMS AND THEIR INFLUENCE ON ELECTRICAL-PROPERTIES OF PLANAR DIFFUSED P-N-JUNCTIONS

被引:0
|
作者
ISKENDERZADE, ZA
MILLER, YG
RZAYEV, SG
JAFAROVA, EA
AKHUNDOV, MR
机构
关键词
D O I
暂无
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
引用
收藏
页码:76 / 83
页数:8
相关论文
共 50 条
  • [21] DIELECTRIC PROPERTIES OF SILICON P-N-JUNCTIONS
    BARSONY, I
    JONSCHER, AK
    SOLID-STATE ELECTRONICS, 1978, 21 (02) : 471 - 473
  • [22] P-N-JUNCTIONS IN POLYCRYSTALLINE-SILICON FILMS
    MANOLIU, J
    KAMINS, TI
    SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1103 - &
  • [23] ELECTRICAL-PROPERTIES OF 6H-SIC P-N-JUNCTIONS WITH AN EPITAXIAL P+-TYPE AL-DOPED LAYER
    VERENCHIKOVA, RG
    VODAKOV, YA
    LITVIN, DP
    MOKHOV, EN
    RAMM, MG
    SANKIN, VI
    OSTROUMOV, AG
    SOKOLOV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1309 - 1311
  • [24] STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSB EPITAXIAL-FILMS GROWN ON GAAS BY LOW-PRESSURE MOCVD
    YOO, BS
    MCKEE, MA
    KIM, SG
    LEE, EH
    SOLID STATE COMMUNICATIONS, 1993, 88 (06) : 447 - 450
  • [25] STRUCTURAL AND ELECTRICAL-PROPERTIES OF LA0.5SR0.5COO3 EPITAXIAL-FILMS
    CHEUNG, JT
    MORGAN, PED
    LOWNDES, DH
    ZHENG, XY
    BREEN, J
    APPLIED PHYSICS LETTERS, 1993, 62 (17) : 2045 - 2047
  • [26] EFFECT OF GAS-PHASE ON ELECTRICAL-PROPERTIES OF EPITAXIAL-FILMS OF CDSE
    EZHOVSKII, YK
    KALINKIN, IP
    BOGOMOLOV, NS
    INORGANIC MATERIALS, 1976, 12 (09) : 1264 - 1267
  • [27] STRUCTURE AND ELECTRICAL-PROPERTIES OF (PBTE)0.8(SNSE)0.2 EPITAXIAL-FILMS
    FREIK, DM
    PAVLYUK, MF
    TKACHUK, RZ
    INORGANIC MATERIALS, 1988, 24 (07) : 938 - 941
  • [28] ELECTRICAL-PROPERTIES OF P-N-JUNCTIONS FORMED BY ION-IMPLANTATION IN N-TYPE SIC
    KALININA, EV
    PROKOFEVA, NK
    SUVOROV, AV
    KHOLUYANOV, GF
    CHELNOKOV, VE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (12): : 1372 - 1374
  • [29] PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS
    HELIX, MJ
    VAIDYANATHAN, KV
    STREETMAN, BG
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 426 - 429
  • [30] ELECTRICAL PROPERTIES OF P-N JUNCTIONS PREPARED BY BOMBARDMENT OF EPITAXIAL SILICON FILMS WITH PHOSPHORUS IONS
    GUSEV, VM
    GUSEVA, MI
    NOSOV, YR
    PINES, GE
    FEDOROVS.YS
    TSYPLENK.VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (11): : 1432 - &