STRUCTURAL DEFECTS IN SILICON EPITAXIAL-FILMS AND THEIR INFLUENCE ON ELECTRICAL-PROPERTIES OF PLANAR DIFFUSED P-N-JUNCTIONS

被引：0
|
作者：
ISKENDERZADE, ZA
MILLER, YG
RZAYEV, SG
JAFAROVA, EA
AKHUNDOV, MR
机构：
来源：
IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK | 1977年 / 04期
关键词：
D O I：
暂无
中图分类号：
O1 [数学];
学科分类号：
0701 ; 070101 ;
摘要：
引用
收藏
页码：76 / 83
页数：8
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF HGCDMNTE P-N-JUNCTIONS
    PLACZEKPOPKO, E
    DUDZIAK, E
    JEDRAL, L
    KASPRAZAK, JF
    PAWLIKOWSKI, JM
    INFRARED PHYSICS, 1989, 29 (05): : 903 - 905
  • [2] ELECTRICAL-PROPERTIES OF SILICON P-N-JUNCTIONS IN STRONG MICROWAVE FIELDS
    ABLYAZIMOVA, NA
    VEINGER, AI
    PITANOV, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (11): : 1267 - 1271
  • [3] INFLUENCE OF NONSTOICHIOMETRY ON PROPERTIES OF DIFFUSED P-N-JUNCTIONS IN SILICON-CARBIDE
    ANDREEV, AP
    VIOLIN, EE
    LEVIN, VI
    TAIROV, YM
    TSVETKOV, VF
    YAREMENKO, IE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (05): : 518 - 520
  • [4] ELECTRICAL-PROPERTIES OF P-N-JUNCTIONS FORMED IN LEAD-TELLURIDE FILMS
    IVANOV, DI
    SAUNIN, IV
    YASKOV, DA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 510 - 511
  • [5] ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODES AND P-N-JUNCTIONS
    POLYAKOV, AY
    STAM, M
    MILNES, AG
    SCHLESINGER, TE
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (04): : 337 - 343
  • [6] FRACTAL-DIFFUSED P-N-JUNCTIONS IN SILICON
    BAGRAEV, NT
    KLYACHKIN, LE
    MALYARENKO, AM
    SUKHANOV, VL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (04): : 391 - 396
  • [7] ELECTRICAL-PROPERTIES OF SPUTTERED EPITAXIAL-FILMS OF GAAS
    SOUKUP, RJ
    KULKARNI, AK
    MOSHER, DM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 208 - 211
  • [8] EPITAXIAL-FILMS AND P-N-JUNCTIONS GROWN BY A SUBLIMATION METHOD IN A SYSTEM WITH ELECTRON HEATING
    ANIKIN, MM
    LEBEDEV, AA
    RASTEGAEVA, MG
    STRELCHUK, AM
    SYRKIN, AL
    CHELNOKOV, VE
    SEMICONDUCTORS, 1994, 28 (07) : 702 - 703
  • [9] THERMALLY STIMULATED CURRENTS IN EPITAXIAL-PLANAR SILICON P-N-JUNCTIONS
    RZAYEV, SG
    ABDULLAYEV, AG
    IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1983, 4 (02): : 70 - 74
  • [10] ELECTRICAL AND STRUCTURAL-PROPERTIES OF P-N-JUNCTIONS IN CW LASER ANNEALED SILICON
    MAIER, M
    BIMBERG, D
    FERNHOLZ, G
    BAUMGART, H
    PHILLIPP, F
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5904 - 5907
12345