HIGH-PERFORMANCE IN0.49GA0.51P/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS

被引：1
|
作者：
WU, CC
LU, SS
机构：
[1] Department of Electrical Engineering, National Taiwan University, Taipei
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期
关键词：
INGAP/GAAS; TUNNELING EMITTER BIPOLAR TRANSISTOR; GAS SOURCE MOLECULAR BEAM EPITAXY; BASE DIFFUSED OHMIC CONTACT; SURFACE RECOMBINATION CURRENT; EMITTER EDGE-THINNING DESIGN;
D O I：
10.1143/JJAP.32.560
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two techniques were used in the fabrication of InGaP/GaAs TEBTs and experimental results by the two fabrication techniques were compared. It is found that the TEBT fabricated by base diffused ohmic contact technique with base surface passivated by an InGaP layer shows a differential current gain as high as 306. To our knowledge, the current gain obtained was the highest value reported to date in InGaP/GaAs hetero-structure bipolar transistors with similar base doping (1 X 10(19) cm-3) and thickness (100 nm).
引用
收藏
页码：560 / 563
页数：4
相关论文
共 50 条
  • [21] DESIGN CONSIDERATIONS OF HIGH-PERFORMANCE NARROW-EMITTER BIPOLAR-TRANSISTORS
    TANG, DD
    CHEN, TC
    CHUANG, CT
    LI, GP
    STORK, JMC
    KETCHEN, MB
    HACKBARTH, E
    NING, TH
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 174 - 175
  • [22] High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor
    Lin, YS
    Hsu, WC
    Wu, CH
    Lin, W
    Hsu, RT
    APPLIED PHYSICS LETTERS, 1999, 75 (11) : 1616 - 1618
  • [23] In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
    Wang, Yue
    Lee, Kwang Hong
    Loke, Wan Khai
    Ben Chiah, Siau
    Zhou, Xing
    Yoon, Soon Fatt
    Tan, Chuan Seng
    Fitzgerald, Eugene
    AIP ADVANCES, 2018, 8 (11):
  • [24] Self-aligned In0.49Ga0.51P/GaAs HBT DC and RF characteristics related with orientations
    Shi, RY
    Gong, M
    Liu, XC
    Sun, HF
    Yuan, ZP
    MICROELECTRONICS JOURNAL, 2004, 35 (11) : 923 - 925
  • [25] Polyimide passivated semitransparent In0.49Ga0.51P/GaAs MSM photodetector operating at 840 nm wavelength
    Matin, MA
    Simmons, JG
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1999, 22 (04) : 241 - 243
  • [26] COMPARISON OF GAINP/GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS AND HETEROJUNCTION BIPOLAR-TRANSISTORS
    YANG, YF
    HSU, CC
    YANG, ES
    CHEN, YK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) : 1210 - 1215
  • [27] High-temperature breakdown characteristics of δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor
    Lee, Ching-Sung
    Hsu, Wei-Chou
    Chen, Yen-Wei
    Chen, Yung-Cha
    Shieh, Hir-Ming
    Japanese journal of applied physics, 2000, 39 (10 B)
  • [28] High-temperature breakdown characteristics of δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor
    Lee, CS
    Hsu, WC
    Chen, YW
    Chen, YC
    Shieh, HM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (10B): : L1029 - L1031
  • [29] COMPOSITIONALLY GRADED EMITTER INGA(AS)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    ITO, H
    NITTONO, T
    WATANABE, N
    ISHIBASHI, T
    ELECTRONICS LETTERS, 1994, 30 (25) : 2174 - 2175
  • [30] HIGH-PERFORMANCE GAINP/GAAS HOLE BARRIER BIPOLAR-TRANSISTORS (HBBTS)
    LEIER, H
    SCHAPER, U
    BACHEM, KH
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 145 - 152
12345