HIGH-PERFORMANCE IN0.49GA0.51P/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS

被引：1
|
作者：
WU, CC
LU, SS
机构：
[1] Department of Electrical Engineering, National Taiwan University, Taipei
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期
关键词：
INGAP/GAAS; TUNNELING EMITTER BIPOLAR TRANSISTOR; GAS SOURCE MOLECULAR BEAM EPITAXY; BASE DIFFUSED OHMIC CONTACT; SURFACE RECOMBINATION CURRENT; EMITTER EDGE-THINNING DESIGN;
D O I：
10.1143/JJAP.32.560
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two techniques were used in the fabrication of InGaP/GaAs TEBTs and experimental results by the two fabrication techniques were compared. It is found that the TEBT fabricated by base diffused ohmic contact technique with base surface passivated by an InGaP layer shows a differential current gain as high as 306. To our knowledge, the current gain obtained was the highest value reported to date in InGaP/GaAs hetero-structure bipolar transistors with similar base doping (1 X 10(19) cm-3) and thickness (100 nm).
引用
收藏
页码：560 / 563
页数：4
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