Self-aligned In0.49Ga0.51P/GaAs HBT DC and RF characteristics related with orientations

被引：0
|
作者：
Shi, RY [1 ]
Gong, M
Liu, XC
Sun, HF
Yuan, ZP
机构：
[1] Sichuan Univ, Dept Phys, Chengdu 610064, Sichuan, Peoples R China
[2] Chinese Acad Sci, Microelect R&D Ctr, Beijing 100029, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2004年 / 35卷 / 11期
关键词：
InGaP/GaAs HBT orientation effects; DC current gain; cutoff frequency; lateral etched profile;
D O I：
10.1016/j.mejo.2004.05.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A self-aligned InGaP/GaAs HBT DC and RF characteristics related with orientations were studied. The DC current gain was greater for the [0 1 1] emitter orientation compared to [0 1 1] orientation. However, it also showed slightly better RF performance for [0 1 1] orientation with a cutoff frequency f(T) 69 GHz compared to the f(T) of 62 GHz for the [0 1 1] orientation. This experimental work has been proposed that the dependence of the characteristics could be attributed to both piezoelectric effect and the difference between lateral etched profiles in different directions. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：923 / 925
页数：3
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