STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSB EPITAXIAL-FILMS GROWN ON GAAS BY LOW-PRESSURE MOCVD

被引：12
|
作者：
YOO, BS [1 ]
MCKEE, MA [1 ]
KIM, SG [1 ]
LEE, EH [1 ]
机构：
[1] EMCORE CORP,SOMERSET,NJ 08873
来源：
SOLID STATE COMMUNICATIONS | 1993年 / 88卷 / 06期
关键词：
D O I：
10.1016/0038-1098(93)90611-P
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
InSb heteroepitaxial films have been grown on GaAs by low-pressure(LP) MOCVD and the structural and electrical properties, thereof have been investigated. For 1.5-2.0 mu m thick InSb heteroepitaxial films, the FWHM of the DCRC ranges from 420 to 894 arcsec and the 77 K electron Hall mobilities are inversely proportional to the square of the rocking-curve width. This result suggests that the electron mobility is limited to the scattering by dislocations. The scattering by the charged dislocations explains the mobility-temperature characteristics of the film having larger rocking-curve width.
引用
收藏
页码：447 / 450
页数：4
相关论文
共 50 条
  • [31] Microstructure, crystallinity, and properties of low-pressure MOCVD-grown europium oxide films
    Singh, M. P.
    Shalini, K.
    Shivashankar, S. A.
    Deepak, G. C.
    Bhat, N.
    Shripathi, T.
    MATERIALS CHEMISTRY AND PHYSICS, 2008, 110 (2-3) : 337 - 343
  • [32] EPITAXIAL-GROWTH OF HIGH-PURITY GAAS BY LOW-PRESSURE MOCVD
    TAKAGISHI, S
    MORI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L100 - L102
  • [33] Correlation between the electrical properties and morphology of low-pressure MOCVD titanium oxynitride thin films grown at various temperatures
    Fabreguette, F.
    Imhoff, L.
    Maglione, M.
    Domenichini, B.
    Marco De Lucas, M.C.
    Sibillot, P.
    Bourgeois, S.
    Sacilotti, M.
    Advanced Materials, 2000, 12 (11) : 109 - 114
  • [34] Correlation between the electrical properties and morphology of low-pressure MOCVD titanium oxynitride thin films grown at various temperatures
    Fabreguette, F
    Imhoff, L
    Maglione, M
    Domenichini, B
    de Lucas, MCM
    Sibillot, P
    Bourgeois, S
    Sacilotti, M
    CHEMICAL VAPOR DEPOSITION, 2000, 6 (03) : 109 - 114
  • [35] STRUCTURAL DEFECTS IN SILICON EPITAXIAL-FILMS AND THEIR INFLUENCE ON ELECTRICAL-PROPERTIES OF PLANAR DIFFUSED P-N-JUNCTIONS
    ISKENDERZADE, ZA
    MILLER, YG
    RZAYEV, SG
    JAFAROVA, EA
    AKHUNDOV, MR
    IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1977, (04): : 76 - 83
  • [36] METASTABLE PB1-XCDXS EPITAXIAL-FILMS .2. ELECTRICAL-PROPERTIES
    SOOD, AK
    WU, K
    ZEMEL, JN
    THIN SOLID FILMS, 1978, 48 (01) : 87 - 94
  • [37] STRUCTURAL AND ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE, LOW-PRESSURE SIO2 ON SI
    DAUPLAISE, HM
    VACCARO, K
    BENNETT, BR
    LORENZO, JP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (06) : 1684 - 1690
  • [38] ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS GROWN AT LOW-TEMPERATURE
    BETKO, J
    KORDOS, P
    KUKLOVSKY, S
    FORSTER, A
    GREGUSOVA, D
    LUTH, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 147 - 150
  • [39] PHOTOLUMINESCENCE AND ELECTRICAL-PROPERTIES OF VAPOR-PHASE EPITAXIAL ZNSE GROWN ON GAAS
    LILLEY, P
    CZERNIAK, MR
    NICHOLLS, JE
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01): : 235 - 242
  • [40] STACKING-FAULT ASYMMETRY IN EPITAXIAL-FILMS OF MOCVD ZNSE/GAAS(001)
    BATSTONE, JL
    STEEDS, JW
    WRIGHT, PJ
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 66 (04): : 609 - 620
12345