STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSB EPITAXIAL-FILMS GROWN ON GAAS BY LOW-PRESSURE MOCVD

被引：12
|
作者：
YOO, BS [1 ]
MCKEE, MA [1 ]
KIM, SG [1 ]
LEE, EH [1 ]
机构：
[1] EMCORE CORP,SOMERSET,NJ 08873
来源：
SOLID STATE COMMUNICATIONS | 1993年 / 88卷 / 06期
关键词：
D O I：
10.1016/0038-1098(93)90611-P
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
InSb heteroepitaxial films have been grown on GaAs by low-pressure(LP) MOCVD and the structural and electrical properties, thereof have been investigated. For 1.5-2.0 mu m thick InSb heteroepitaxial films, the FWHM of the DCRC ranges from 420 to 894 arcsec and the 77 K electron Hall mobilities are inversely proportional to the square of the rocking-curve width. This result suggests that the electron mobility is limited to the scattering by dislocations. The scattering by the charged dislocations explains the mobility-temperature characteristics of the film having larger rocking-curve width.
引用
收藏
页码：447 / 450
页数：4
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