PREPARATION OF CATIO3 HETEROEPITAXIAL THIN-FILMS BY EXCIMER-LASER DEPOSITION

被引：13
|
作者：
FUJII, T
FUJISHIMA, A
HIRANO, T
KOBAYASHI, T
机构：
[1] Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, 1-1, Machikaneyama
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期
关键词：
D O I：
10.1063/1.109078
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
CaTiO3 thin films were prepared by a 193 nm ArF excimer laser deposition method. Epitaxial CaTiO3 thin films were obtained on SrTiO3 (100) substrate and YBa2Cu3Oy (001) deposited on MgO (100) single-crystal substrate. The grown CaTiO3 thin films orientated to (010) direction and the unit cell of CaTiO3 rotated 45-degrees around the [100] axis of the SrTiO3 substrate. It also happened in CaTiO3/YBa2Cu3Oy/MgO system. The static dielectric constant was 120 at room temperature and reached 175 at lower temperatures.
引用
收藏
页码：3204 / 3206
页数：3
相关论文
共 50 条
  • [21] ONE-SHOT EXCIMER-LASER LAMINAR ANNEALING OF SRTIO3 THIN-FILMS IN SOLIDUS PHASE
    TAGA, M
    MIYAKE, H
    KOBAYASHI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (11A): : L1534 - L1537
  • [22] Luminescent characteristics of CaTiO3:Pr3+ thin films prepared by pulsed laser deposition method with various substrates
    Yang, Hyun Kyoung
    Chung, Jong Won
    Raju, G. Seeta Rama
    Moon, Byung Kee
    Choi, Byung Chun
    Jeong, Jung Hyun
    Kim, Jung Hwan
    APPLIED SURFACE SCIENCE, 2009, 255 (09) : 5062 - 5066
  • [23] EFFECTS OF LIGHT-PULSE DURATION ON EXCIMER-LASER CRYSTALLIZATION CHARACTERISTICS OF SILICON THIN-FILMS
    ISHIHARA, R
    YEH, WC
    HATTORI, T
    MATSUMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A): : 1759 - 1764
  • [24] PULSED EXCIMER-LASER ETCHING OF LA0.75CA0.25MNOX THIN-FILMS
    DHOTE, AM
    SHREEKALA, R
    PATIL, SI
    OGALE, SB
    VENKATESAN, T
    WILLIAMS, CM
    APPLIED PHYSICS LETTERS, 1995, 67 (24) : 3644 - 3646
  • [25] Location control of crystal Si grain followed by excimer-laser melting of Si thin-films
    Ishihara, Ryoichi
    van der Wilt, Paul Ch.
    1998, JJAP, Tokyo, Japan (37):
  • [26] Location control of crystal Si grain followed by excimer-laser melting of Si thin-films
    Ishihara, R
    Van der Wilt, PC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (1AB): : L15 - L17
  • [27] SI1-XGEX THIN-FILMS DEPOSITED BY THE PULSED EXCIMER-LASER ABLATION TECHNIQUE
    ANTONI, F
    FOGARASSY, E
    FUCHS, C
    PREVOT, B
    STOQUERT, JP
    APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 175 - 179
  • [28] LITHIUM-NIOBATE FILMS GROWN BY EXCIMER-LASER DEPOSITION
    AFONSO, CN
    VEGA, F
    GONZALO, J
    ZALDO, C
    APPLIED SURFACE SCIENCE, 1993, 69 (1-4) : 149 - 155
  • [29] PULSED EXCIMER-LASER DEPOSITION OF POTASSIUM TITANYL PHOSPHATE FILMS
    XIONG, FL
    CHANG, RPH
    HAGERMAN, ME
    KOZHEVNIKOV, VL
    POEPPELMEIER, KR
    ZHOU, HT
    WONG, GK
    KETTERSON, JB
    WHITE, CW
    APPLIED PHYSICS LETTERS, 1994, 64 (02) : 161 - 163
  • [30] DEPOSITION OF SIO2 THIN-FILMS BY REACTIVE EXCIMER LASER ABLATION
    TSUJI, M
    ITOH, N
    NISHIMURA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (08): : 2536 - 2539
12345