CRYSTALLINE GROWTH OF GALLIUM-ARSENIDE BY CHEMICAL VAPOR-DEPOSITION FROM MONOCHLORODIETHYL GALLIUM-TRIETHYLARSINE COMPLEX

被引:15
|
作者
ZAOUK, A
LEBUGLE, A
CONSTANT, G
机构
关键词
D O I
10.1016/0022-0248(79)90091-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:415 / 420
页数:6
相关论文
共 50 条
  • [41] CHEMICAL METHOD FOR PRECIPITATING GOLD ONTO GALLIUM-ARSENIDE FROM SOLUTIONS OF PHOSPHORIC-ACID
    VOZMILOV.LN
    SERGEEVA, EG
    ZHURNAL PRIKLADNOI KHIMII, 1972, 45 (05) : 1097 - &
  • [43] CHEMICAL VAPOR-DEPOSITION OF CUBIC GALLIUM SULFIDE THIN-FILMS - A NEW METASTABLE PHASE
    MACINNES, AN
    POWER, MB
    BARRON, AR
    CHEMISTRY OF MATERIALS, 1992, 4 (01) : 11 - 14
  • [44] RESIDUAL DONORS IN HIGH-PURITY GALLIUM-ARSENIDE EPITAXIALLY GROWN FROM VAPOR-PHASE
    OZEKI, M
    KITAHARA, K
    NAKAI, K
    SHIBATOMI, A
    DAZAI, K
    OKAWA, S
    RYUZAN, O
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1617 - 1622
  • [45] GROWTH AND DIFFUSION OF ABRUPT BERYLLIUM-DOPED PROFILES IN GALLIUM-ARSENIDE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    TEJWANI, MJ
    KANBER, H
    PAINE, BM
    WHELAN, JM
    APPLIED PHYSICS LETTERS, 1988, 53 (24) : 2411 - 2413
  • [46] SURFACE-MORPHOLOGY OF PHOTO-ASSISTED CHEMICAL BEAM EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE
    FARRELL, T
    ARMSTRONG, JV
    BULLOUGH, TJ
    BEANLAND, R
    JOYCE, TB
    GOODHEW, PJ
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 148 - 151
  • [47] ORGANOMETALLIC VAPOR-PHASE HOMOEPITAXY OF GALLIUM-ARSENIDE ASSISTED BY A DOWNSTREAM HYDROGEN AFTERGLOW PLASMA IN THE GROWTH REGION
    PIHLSTROM, BG
    SHENG, TY
    THOMPSON, LR
    COLLINS, GJ
    APPLIED PHYSICS LETTERS, 1992, 60 (25) : 3144 - 3146
  • [48] Machine learning models in the process of metal organic chemical vapor deposition epitaxial manufacturing of Gallium Arsenide
    Cai, Yixuan
    He, Yicong
    Wang, Gang
    Li, Zihao
    Pei, Yanli
    Yang, Wenyi
    Rao, Wei
    Li, Jian
    MATERIALS TODAY COMMUNICATIONS, 2024, 40
  • [49] Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition
    Zhu, Ming
    Chin, Hock-Chun
    Samudra, Ganesh S.
    Yeo, Yee-Chia
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (02) : H76 - H79
  • [50] Atmospheric Pressure Chemical Vapor Deposition Growth Window for Undoped Gallium Antimonide
    A. Subekti
    E. M. Goldys
    Melissa J. Paterson
    K. Drozdowicz-Tomsia
    T. L. Tansley
    Journal of Materials Research, 1999, 14 : 1238 - 1245