共 50 条
- [35] Chemical Vapor Deposition of GaN from Gallium and Ammonium Chloride Inorganic Materials, 2004, 40 : 1049 - 1053
- [38] EFFECT OF GALLIUM AND ARSENICUM EXCESS IN VAPOR-PHASE ON GALLIUM-ARSENIDE GROWTH IN LESS-THAN 111 GREATER-THAN DIRECTION IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1972, (10): : 43 - +
- [40] THE INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION ON GALLIUM INCORPORATION IN HGCDTE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1039 - 1044