SURFACE-MORPHOLOGY OF PHOTO-ASSISTED CHEMICAL BEAM EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE

被引：0
|
作者：
FARRELL, T
ARMSTRONG, JV
BULLOUGH, TJ
BEANLAND, R
JOYCE, TB
GOODHEW, PJ
机构：
[1] Department of Materials Science and Engineering, The University of Liverpool, Liverpool
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90594-M
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effect of pulsed UV excimer laser irradiation on the growth rate and surface morphology of GaAs layers grown by chemical beam epitaxy (CBE) has been investigated. Electron and optical microscopy reveals the surface of the laser assisted growths to be comprised of micron sized undulations and ripples which can be detected in real time from dynamic optical reflectivity.
引用
收藏
页码：148 / 151
页数：4
相关论文
共 50 条
  • [1] PHOTO-ASSISTED GROWTH OF GALLIUM-ARSENIDE
    VERE, AW
    RODWAY, DC
    MACKEY, KJ
    SMITH, PC
    MOORES, PK
    JOURNAL OF CRYSTAL GROWTH, 1992, 121 (1-2) : 62 - 70
  • [2] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE
    BOUCHER, A
    EASTON, BC
    PHILIPS TECHNICAL REVIEW, 1971, 32 (9-12): : 380 - 384
  • [3] SELECTIVE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    OHATA, K
    APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1512 - 1514
  • [4] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE LAYERS OF GERMANIUM SUBSTRATES
    KAMADJIE.PR
    SOTIROV, SS
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1972, 25 (11): : 1499 - 1502
  • [5] INITIAL-STAGES OF EPITAXIAL-GROWTH - GALLIUM-ARSENIDE ON SILICON
    ZINKEALLMANG, M
    FELDMAN, LC
    NAKAHARA, S
    APPLIED PHYSICS LETTERS, 1988, 52 (02) : 144 - 146
  • [6] EPITAXIAL GALLIUM-ARSENIDE GROWTH
    不详
    ELECTRONIC ENGINEERING, 1979, 51 (627): : 10 - 10
  • [7] SURFACE-MORPHOLOGY OF SELECTIVE EPITAXIAL-GROWTH SILICON
    LIAW, HM
    NGUYEN, NT
    WOODS, GP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C100 - C100
  • [8] EVOLUTION OF SURFACE-MORPHOLOGY DURING EPITAXIAL-GROWTH
    VVEDENSKY, DD
    HAIDER, N
    SHITARA, T
    SMILAUER, P
    PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 344 (1673): : 493 - 505
  • [9] LIQUID-PHASE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE ON AN ETCHED SUBSTRATE
    NORDQUIST, PER
    LESSOFF, H
    SWIGGARD, EM
    MATERIALS RESEARCH BULLETIN, 1976, 11 (08) : 939 - 945
  • [10] EPITAXIAL-GROWTH KINETICS OF GALLIUM-ARSENIDE FROM LIQUID-PHASE
    ILKOV, LH
    DJOGLEV, DH
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1976, 29 (04): : 511 - 514
12345