SURFACE-MORPHOLOGY OF PHOTO-ASSISTED CHEMICAL BEAM EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE

被引：0
|
作者：
FARRELL, T
ARMSTRONG, JV
BULLOUGH, TJ
BEANLAND, R
JOYCE, TB
GOODHEW, PJ
机构：
[1] Department of Materials Science and Engineering, The University of Liverpool, Liverpool
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90594-M
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effect of pulsed UV excimer laser irradiation on the growth rate and surface morphology of GaAs layers grown by chemical beam epitaxy (CBE) has been investigated. Electron and optical microscopy reveals the surface of the laser assisted growths to be comprised of micron sized undulations and ripples which can be detected in real time from dynamic optical reflectivity.
引用
收藏
页码：148 / 151
页数：4
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