MOBILITY OF ELECTRONS IN A QUANTIZED SILICON INVERSION LAYER DUE TO PHONON-SCATTERING

被引：14

|

作者：

ROYCHOUDHURY, D

BASU, PK

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.22.6325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：6325 / 6329

页数：5

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