INTER-VALLEY AND INTERSUBBAND SCATTERING IN A QUANTIZED SILICON INVERSION LAYER

被引:8
|
作者
BASU, PK
ROY, JB
NAG, BR
机构
来源
PHYSICAL REVIEW B | 1982年 / 25卷 / 10期
关键词
D O I
10.1103/PhysRevB.25.6380
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6380 / 6384
页数:5
相关论文
共 50 条
  • [1] The effect of inter-valley scattering on weak localisation in graphene
    Tikhonenko, F. V.
    Horsell, D. W.
    Wilkinson, B.
    Gorbachev, R. V.
    Savchenko, A. K.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05): : 1364 - 1366
  • [2] INVERSION LAYER MOBILITY WITH INTERSUBBAND SCATTERING
    EZAWA, H
    SURFACE SCIENCE, 1976, 58 (01) : 25 - 32
  • [3] ELECTRON-PHONON INTERACTION AND INTER-VALLEY SCATTERING IN SEMICONDUCTORS
    HERBERT, DC
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (18): : 2788 - 2810
  • [4] MOBILITY OF ELECTRONS IN A QUANTIZED SILICON INVERSION LAYER DUE TO PHONON-SCATTERING
    ROYCHOUDHURY, D
    BASU, PK
    PHYSICAL REVIEW B, 1980, 22 (12): : 6325 - 6329
  • [5] Valley precession and valley polarization in graphene with inter-valley coupling
    Wu, Qing-Ping
    Liu, Zheng-Fang
    Chen, Ai-Xi
    Xiao, Xian-Bo
    Zhang, Heng
    Miao, Guo-Xing
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (39)
  • [7] INTER-VALLEY ACOUSTOIMPURITY RESONANCE IN SEMICONDUCTORS
    MARGULIS, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (03): : 355 - 356
  • [8] Ultrafast optical response and inter-valley scattering in GaSb/AlSb quantum wells
    Smith, D.C.
    O'Sullivan, E.D.
    Rota, L.
    Maciel, A.C.
    Ryan, J.F.
    Physica E: Low-Dimensional Systems and Nanostructures, 1998, 2 (1-4): : 156 - 160
  • [9] Ultrafast optical response and inter-valley scattering in GaSb/AlSb quantum wells
    Smith, DC
    O'Sullivan, ED
    Rota, L
    Maciel, AC
    Ryan, JF
    PHYSICA E, 1998, 2 (1-4): : 156 - 160
  • [10] ELECTRODIPOLE TRANSITIONS IN INTER-VALLEY MULTIPLETS
    SAVVINYKH, VI
    FIZIKA TVERDOGO TELA, 1981, 23 (12): : 3717 - 3718