共 50 条
- [1] INTERSUBBAND SCATTERING EFFECT ON THE MOBILITY OF A SI (100) INVERSION LAYER AT LOW-TEMPERATURES PHYSICAL REVIEW B, 1979, 19 (12): : 6433 - 6441
- [2] INTER-VALLEY AND INTERSUBBAND SCATTERING IN A QUANTIZED SILICON INVERSION LAYER PHYSICAL REVIEW B, 1982, 25 (10): : 6380 - 6384
- [5] MOBILITY OF ELECTRONS IN A QUANTIZED SILICON INVERSION LAYER DUE TO PHONON-SCATTERING PHYSICAL REVIEW B, 1980, 22 (12): : 6325 - 6329
- [6] Inversion layer mobility in SiC MOSFETs SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 997 - 1000
- [7] Inversion layer mobility in SiC MOSFETs Materials Science Forum, 1998, 264-268 (pt 2): : 997 - 1000
- [8] SURFACE SCATTERING IN A QUANTUM INVERSION LAYER SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (10): : 1201 - 1202