MOBILITY OF ELECTRONS IN A QUANTIZED SILICON INVERSION LAYER DUE TO PHONON-SCATTERING

被引：14
|
作者：
ROYCHOUDHURY, D
BASU, PK
机构：
来源：
PHYSICAL REVIEW B | 1980年 / 22卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.22.6325
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6325 / 6329
页数：5
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