DEVICE MODELING AND PHYSICS

被引：1
|
作者：
SELBERHERR, S
机构：
[1] Institute for Microelectronics, Technical University Vienna, Wien, A-1040
来源：
PHYSICA SCRIPTA | 1991年 / T35卷
关键词：
D O I：
10.1088/0031-8949/1991/T35/057
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The state of the art in self-consistent numerical modeling of semiconductor devices is reviewed. The physical assumptions which are required to describe carrier transport in highly miniaturized semiconductor devices are discussed. Particular emphasis is put on the physical models for space charge, carrier mobility, carrier temperature, and carrier generation-recombination for silicon devices. The numerical solution of the semiconductor device equations is commented. Investigations about three-dimensional effects in MOS-devices are presented as typical results.
引用
收藏
页码：293 / 298
页数：6
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